Assertion (A): Graphite is a good conductor of electricity, however, diamond belongs to the category of insulators.
Reason (R): Graphite is soft in nature on the other hand diamond is very hard and brittle.
(b) Diamond is bad conductor of electricity because all valence e of carbon are involved in bonding. In graphite however 3 out of 4 valence electrons are involved in bonding, fourth electron remains free between adjacent layers which makes it a good conductor.
Graphite is soft because parallel layers are held together by week van der Waals force. However, diamond is hard due to compact three-dimensional network of bonding.
Niobium crystallises in a body centred cubic structure. If density is 8.55 g cm-3, calculate atomic radius of niobium, using its atomic mass 93u.
In spite of long range order in the arrangement of particles why are the crystals usually not perfect?
The total number of tetrahedral voids in the face centered unit cell is
(a) 6 (c) 10
(b) 8 (d) 12
An excess of potassium ions makes KCl crystals appear violet or Lilac in colour since
(a) some of the anionic sites are occupied by an unpaired electron
(b) some of the anionic sites are occupied by a pair of electrons
(c) there are vacancies at some’anionic sites
(d) F-centres are created which impart colour to the crystals
Cations are present in the interstitial sites in
(a) Frenkel defect (b) Schottky defect
(c) vacancy defect (d) metal deficiency defect .
Gold (atomic radius = 0.144 nm) crystallises in a face centred unit cell. What is the length of the side of the unit cell ?
Refractive index of a solid is observed to have the same value along all directions. Comment on the nature of this solid. Would it show cleavage property?
Explain:
(i) The basis of similarities and differences between metallic and ionic crystals.
(ii) Ionic solids are hard and brittle.
A cubic solid is made up of two elements P and Q. Atoms of Q are at the corners of the cube and P at the body centre. What is the formula of the compound? What are the coordination numbers of P and Q?
In which of the following arrangements octahedral voids are formed?
(a) hep (b) bcc (c) simple cubic (d) fee
Ferric oxide crystallises in a hexagonal dose- packed array of oxide ions with two out of every three octahedral holes occupied by ferric ions. Derive the formula of the ferric oxide.
Explain the following terms with suitable examples :
How will you distinguish between the following pairs of terms:
(i) Cubic close packing and hexagonal close packing?
(ii) Crystal lattice and unit cell?
(iii) Tetrahedral void and octahedral void?
Niobium crystallises in a body centred cubic structure. If density is 8.55 g cm-3, calculate atomic radius of niobium, using its atomic mass 93u.
Which of the following is not a characteristic of a crystalline solid?
(a) Definite and characteristic heat of fusion
(b) Isotropic nature
(c) A regular periodically repeated pattern of arrangement of constituent particles in the entire crystal
(d) A true solid
Assertion (A): Graphite is a good conductor of electricity, however, diamond belongs to the category of insulators.
Reason (R): Graphite is soft in nature on the other hand diamond is very hard and brittle.
In terms of band theory, what is the difference
Classify .the following solids in different categories based on the nature of intermolecular forces operating in them: Potassium sulphate, tin, benzene, urea, ammonia, water, zinc sulphide, graphite, rubidium, argon, silicon carbide
What is the two-dimensional coordination number of a molecule in square close-packed layer?
What type of defect can arise when a solid is heated? Which physical property is affected by it and in what way?
How can you determine the atomic mass of an unknown metal if you know its density and the dimensions of its unit cell? Explain.
What type of defect can arise when a solid is heated? Which physical property is affected by it and in what way?
Explain how much portion of an atom located at
(i)corner and (ii)body centre of a cubic unit cell is part of its neighbouring unit cell.
How many lattice points are there is one unit cell of each of the following lattices?
(i) Face centred cubic (if) Face centred tetragonal (iii) Body centred cubic
Which of the following is not true about voids formed in three dimensional hexagonal close packed structure?
(a) A tetrahedral void is formed when a sphere of the second layer is present above triangular void in the first layer
(b) All the triangular voids are not covered by the spheres of the second layer
(c) Tetrahedral voids are formed when the triangular voids in the second layer lie above the triangular voids in the first layer and the triangular voids in the first layer and the triangular shapes of these voids do not overlap
(d) Octahedral voids are formed when the triangular voids in the second layer exactly overlap with similar voids in the first layer.
Which of the following statements are true about semiconductors?
(a) Silicon doped with an electron rich impurity is a p-type semiconductor
(b) Silicon doped with an electron rich impurity is an n-type semiconductor
(c) Delocalised electrons increase the conductivity of doped silicon
(d) An electron vacancy increases the conductivity of type semiconductor
In a compound, nitrogen atoms (N) make cubic close packed lattice and metal atoms (M) occupy one-third of the tetrahedral voids present. Determine the formula of the compound formed by M and N?
In the following questions, a statement of Assertion (A) followed by a statement of Reason (R) is given. Choose the correct answer out of the following choices.
(a) Assertion and Reason both are correct statements and Reason is the correct explanation for Assertion.
(b) Assertion and Reason both are correct statements but Reason is not the correct explanation for Assertion.
(c) Assertion is correct but Reason is wrong.
(d) Assertion is wrong but Reason is correct.
Assertion (A): The total number of atoms present in a simple cubic unit cell is one.
Reason (R): Simple cubic unit cell has atoms at its comers, each of which is shared between eight adjacent unit cells.
A compound is formed by two elements M and N. The element N forms ccp and atoms of the element M occupy 1/3 of the tetrahedral voids. What is the formula of the compound? (C.B.S.E. Foreign 2015)
Classify each of the following solids as ionic, metallic, modular, network (covalent), or amorphous:
(i) Tetra phosphorus decoxide (P4O10) (ii) Ammonium phosphate, (NH4)3PO4 (iii) SiC (iv) I2 (v) P4 (vii) Graphite (viii), Brass (ix) Rb (x) LiBr (xi) Si
Distinguish between
(i) Hexagonal and monoclinic unit cells
(ii) Face-centred and end-centred unit cells.
Ionic solids, which have anionic vacancies due to metal excess defect, develop colour. Explain with the help of a suitable example.
Stability of a crystal is reflected in the magnitude of its melting points'. Comment. Collect melting points of solid water, ethyl alcohol, diethyl ether and methane from a data book. What can you say about the intermolecular forces between these molecules?
Explain:
(i) The basis of similarities and differences between metallic and ionic crystals.
(ii) Ionic solids are hard and brittle.
Copper crystallises into a fee lattice with edge length 3.61 x 10-8 cm. Show that the calculated density is in agreement with its measured value of 8.92 gcm-3.
Which of the following is not the characteristic of ionic solids?
(a) Very low value of electrical conductivity in the molten state
(b) Brittle nature
(c) Very strong forces of interactions
(d) Anisotropic nature
Under the influence of electric field, which of the following statements are true about the movement of electrons and holes in a p-type semiconductor?
(a) Electron will move towards the positively charged plate through electron holes
(b) Holes will appear to be moving towards the negatively charged plate
(c) Both electrons and holes appear to move towards the positively charged plate
(d) Movement of electrons is not related to the movement of holes
A perfect crystal of silicon (fig) is doped with some elements as given in the options. Which of these options show n-type semiconductors?
Which of the following defects decrease the density?
(a) Interstitial defect (b) Vacancy defect
(c) Frenkel defect (d) Schottky defect
