Electronic Devices and Circuits

Fermi Level in a Semiconductor having Impurities

Question 1
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Pass Ratio : 50%
When the temperature of either n-type or p-type increases, determine the movement of the position of the Fermi energy level?
Towards up of energy gap
Towards down of energy gap
Towards centre of energy gap
Towards out of page
Explanation:
whenever the temperature increases, the Fermi energy level tends to move at the centre of the energy gap.
Question 2
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Where will be the position of the Fermi level of the n-type material when ND=NA?
Ec
Ev
Ef
Efi
Explanation:
When ND=NA, kTln(ND/NA )=0
Question 3
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Which of the following expression represent the correct formulae for calculating the exact position of the Fermi level for p-type material?
EF = EV + kTln(ND / NA )
EF = -EV + kTln(ND / NA )
EF = EV – kTln(ND / NA )
EF = -EV – kTln(ND / NA )
Explanation:
The correct position of the Fermi level is found with the formula in the ‘a’ option.
Question 4
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Consider a bar of silicon having carrier concentration n0=1015 cm-3 and ni=1010cm-3. Assume the excess carrier concentrations to be n=1013cm-3, calculate the quasi-fermi energy level at T=300K?
0.2982 eV
0.2984 eV
0.5971 eV
1Ev
Explanation:
Question 5
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Is it true, when the temperature rises, the electrons in the conduction band becomes greater than the donor atoms?
True
False
Explanation:
When the temperature increases, there is an increase in the electron-hole pairs and all the donor atoms get ionized, so now the thermally generated electrons will be greater than the donor atoms.
Question 6
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From the above equation, assuming the same values for the for ni, n= p and T. Given that p0=105cm-3. Calculate the quasi-fermi energy level in eV?
0.1985
0.15
0.1792
0.1
Explanation:
Using the same equation,
Question 7
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Ef lies in the middle of the energy level indicates the unequal concentration of the holes and the electrons?
True
False
Explanation:
When the Ef is in the middle of the energy level, it indicates the equal concentration of the holes and electrons.
Question 8
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If excess charge carriers are created in the semiconductor then the new Fermi level is known as Quasi-Fermi level. Is it true?
True
False
Explanation:
Quasi-fermi level is defined as the change in the level of the Fermi level when the excess chare carriers are added to the semiconductor.
Question 9
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If the excess carriers are created in the semiconductor, then identify the correct energy level diagram.
Explanation:
The diagram A refers the most suitable energy level diagrams because Efp>Ef>Efi>Efp>Ev.
Question 10
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Which states get filled in the conduction band when the donor-type impurity is added to a crystal?
Na
Nd
N
P
Explanation:
When the donor-type impurity is added to a crystal, first Nd states get filled because it is of the highest energy.